![]() Scaling GaN to higher power levels in IBCs and LV drivesġ0 kW electric vehicle charger with CoolGaN™ĭriving Infineon's CoolGaN™ GIT HEMTs with EiceDRIVER™ gate driver ICs With a predicted lifetime of more than 15 years and a failure rate below 1 FIT, customers can rely on its reliability and quality. The superfast switching speed of Infineon’s CoolGaN™ enables a very short dead-time. In high-frequency operations, above 200-250kHz, switching speed is key to determining how the transfer of energy occurs. Switched-mode power circuits using CoolGaN™ can benefit from the improved energy efficiency and the improved power density, which is not possible with state-of-the-art silicon devices. The pioneering quality ensures the highest standards and offers the most reliable and performing solution among all GaN HEMTs on the market. ![]() With extensive experience on the semiconductor market, Infineon’s GaN technology brought the e-mode concept to maturity with end-to-end production in high volumes. Infineon’s CoolGaN™ is a highly efficient GaN (gallium nitride) transistor technology for power conversion in the voltage range up to 600V. Therefore, hard-switching topologies such as totem-pole PFC can be employed to achieve higher efficiency, for example in datacenter and server power supplies, in order to save energy and reduce OPEX. As Infineon’s CoolGaN™ transistors have no minority carriers and no body diode they do not exhibit a reverse recovery. The most important feature of a GaN power transistor is its reverse recovery performance. Operation at high switching frequencies allows the volume of passive components to shrink which improves GaN HEMTs reliability and overall power density. ![]() Gallium nitride transistors can then be operated with reduced dead-times which results in higher efficiency and enables passive cooling. In particular, the higher critical electrical field makes it very attractive for power semiconductor devices with outstanding specific dynamic on-state resistance and smaller capacitances compared to silicon MOSFETs, which makes GaN HEMTs great for high speed switching applications. Gallium nitride (GaN) transistors offer fundamental advantages over silicon.
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